The global Ferroelectric Random Access Memory market size was valued at US$ 293 million in 2024 and is forecast to a readjusted size of USD 377 million by 2031 with a CAGR of 3.7% during review period.
Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a random-access memory similar in construction to DRAM but utilizing a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile random-access memory technologies which can offer that same functionality as flash memory.
FeRAM consists of a grid of small capacitors and associated wiring and signling transistors. Each storage element, a cell, consists of one capacitor and one transistor. Unlike the DRAM use a linear dielectric in its cell capacitor, dielectric structure in the FeRAM cell capacitor usually contains ferroelectric material, typically lead zirconate titanate (PZT).
A ferroelectric material has a nonlinear relationship between the applied electric field and the apparent stored charge. The ferroelectric characteristic has the form of a hysteresis loop, which is very similar in shape to the hysteresis loop of ferromagnetic materials. The dielectric constant of a ferroelectric is typically much higher than that of a linear dielectric because of the effects of semi-permanent electric dipoles formed in the crystal structure of the ferroelectric material. When an external electric field is applied across a dielectric, the dipoles tend to align themselves with the field direction, produced by small shifts in the positions of atoms and shifts in the distributions of electronic charge in the crystal structure. After the charge is removed, the dipoles retain their polarization state. Binary "0"s and "1"s are stored as one of two possible electric polarizations in each data storage cell. For example, in the figure a "1" is encoded using the negative remnant polarization "-Pr", and a "0" is encoded using the positive remnant polarization "+Pr".In terms of operation, FeRAM is similar to DRAM. Writing is accomplished by applying a field across the ferroelectric layer by charging the plates on either side of it, forcing the atoms inside into the "up" or "down" orientation (depending on the polarity of the charge), thereby storing a "1" or "0". Reading, however, is somewhat different than in DRAM. The transistor forces the cell into a particular state, say "0". If the cell already held a "0", nothing will happen in the output lines. If the cell held a "1", the re-orientation of the atoms in the film will cause a brief pulse of current in the output as they push electrons out of the metal on the "down" side. The presence of this pulse means the cell held a "1". Since this process overwrites the cell, reading FeRAM is a destructive process, and requires the cell to be re-written if it was changed.
The major players in global Ferroelectric RAM market include Ramtron, Fujistu, etc. The top 2 players occupy about 85% shares of the global market. North America and China are main markets, they occupy about 60% of the global market. Serial Memory is the main type, with a share about 60%. Smart Meters and Medical Devices are main applications, which hold a share about 50%.
This report is a detailed and comprehensive analysis for global Ferroelectric Random Access Memory market. Both quantitative and qualitative analyses are presented by manufacturers, by region & country, by Type and by Application. As the market is constantly changing, this report explores the competition, supply and demand trends, as well as key factors that contribute to its changing demands across many markets. Company profiles and product examples of selected competitors, along with market share estimates of some of the selected leaders for the year 2025, are provided.
Key Features:
Global Ferroelectric Random Access Memory market size and forecasts, in consumption value ($ Million), sales quantity (K Units), and average selling prices (USD/Unit), 2020-2031
Global Ferroelectric Random Access Memory market size and forecasts by region and country, in consumption value ($ Million), sales quantity (K Units), and average selling prices (USD/Unit), 2020-2031
Global Ferroelectric Random Access Memory market size and forecasts, by Type and by Application, in consumption value ($ Million), sales quantity (K Units), and average selling prices (USD/Unit), 2020-2031
Global Ferroelectric Random Access Memory market shares of main players, shipments in revenue ($ Million), sales quantity (K Units), and ASP (USD/Unit), 2020-2025
The Primary Objectives in This Report Are:
To determine the size of the total market opportunity of global and key countries
To assess the growth potential for Ferroelectric Random Access Memory
To forecast future growth in each product and end-use market
To assess competitive factors affecting the marketplace
This report profiles key players in the global Ferroelectric Random Access Memory market based on the following parameters - company overview, sales quantity, revenue, price, gross margin, product portfolio, geographical presence, and key developments. Key companies covered as a part of this study include Cypress Semiconductor Corporations, Texas Instruments, International Business Machines, Toshiba Corporation, Infineon Technologies Inc, LAPIS Semiconductor Co, Fujitsu Ltd, ROHM, etc.
This report also provides key insights about market drivers, restraints, opportunities, new product launches or approvals.
Market Segmentation
Ferroelectric Random Access Memory market is split by Type and by Application. For the period 2020-2031, the growth among segments provides accurate calculations and forecasts for consumption value by Type, and by Application in terms of volume and value. This analysis can help you expand your business by targeting qualified niche markets.
Market segment by Type
16K
32K
64K
Others
Market segment by Application
Electronics
Aerospace
Others
Major players covered
Cypress Semiconductor Corporations
Texas Instruments
International Business Machines
Toshiba Corporation
Infineon Technologies Inc
LAPIS Semiconductor Co
Fujitsu Ltd
ROHM
Market segment by region, regional analysis covers
North America (United States, Canada, and Mexico)
Europe (Germany, France, United Kingdom, Russia, Italy, and Rest of Europe)
Asia-Pacific (China, Japan, Korea, India, Southeast Asia, and Australia)
South America (Brazil, Argentina, Colombia, and Rest of South America)
Middle East & Africa (Saudi Arabia, UAE, Egypt, South Africa, and Rest of Middle East & Africa)
The content of the study subjects, includes a total of 15 chapters:
Chapter 1, to describe Ferroelectric Random Access Memory product scope, market overview, market estimation caveats and base year.
Chapter 2, to profile the top manufacturers of Ferroelectric Random Access Memory, with price, sales quantity, revenue, and global market share of Ferroelectric Random Access Memory from 2020 to 2025.
Chapter 3, the Ferroelectric Random Access Memory competitive situation, sales quantity, revenue, and global market share of top manufacturers are analyzed emphatically by landscape contrast.
Chapter 4, the Ferroelectric Random Access Memory breakdown data are shown at the regional level, to show the sales quantity, consumption value, and growth by regions, from 2020 to 2031.
Chapter 5 and 6, to segment the sales by Type and by Application, with sales market share and growth rate by Type, by Application, from 2020 to 2031.
Chapter 7, 8, 9, 10 and 11, to break the sales data at the country level, with sales quantity, consumption value, and market share for key countries in the world, from 2020 to 2025.and Ferroelectric Random Access Memory market forecast, by regions, by Type, and by Application, with sales and revenue, from 2026 to 2031.
Chapter 12, market dynamics, drivers, restraints, trends, and Porters Five Forces analysis.
Chapter 13, the key raw materials and key suppliers, and industry chain of Ferroelectric Random Access Memory.
Chapter 14 and 15, to describe Ferroelectric Random Access Memory sales channel, distributors, customers, research findings and conclusion.
Please Note - This is an on demand report and will be delivered in 2 business days (48 Hours) post payment.
1 Market Overview
1.1 Product Overview and Scope
1.2 Market Estimation Caveats and Base Year
1.3 Market Analysis by Type
1.3.1 Overview: Global Ferroelectric Random Access Memory Consumption Value by Type: 2020 Versus 2024 Versus 2031
1.3.2 16K
1.3.3 32K
1.3.4 64K
1.3.5 Others
1.4 Market Analysis by Application
1.4.1 Overview: Global Ferroelectric Random Access Memory Consumption Value by Application: 2020 Versus 2024 Versus 2031
1.4.2 Electronics
1.4.3 Aerospace
1.4.4 Others
1.5 Global Ferroelectric Random Access Memory Market Size & Forecast
1.5.1 Global Ferroelectric Random Access Memory Consumption Value (2020 & 2024 & 2031)
1.5.2 Global Ferroelectric Random Access Memory Sales Quantity (2020-2031)
1.5.3 Global Ferroelectric Random Access Memory Average Price (2020-2031)
2 Manufacturers Profiles
2.1 Cypress Semiconductor Corporations
2.1.1 Cypress Semiconductor Corporations Details
2.1.2 Cypress Semiconductor Corporations Major Business
2.1.3 Cypress Semiconductor Corporations Ferroelectric Random Access Memory Product and Services
2.1.4 Cypress Semiconductor Corporations Ferroelectric Random Access Memory Sales Quantity, Average Price, Revenue, Gross Margin and Market Share (2020-2025)
2.1.5 Cypress Semiconductor Corporations Recent Developments/Updates
2.2 Texas Instruments
2.2.1 Texas Instruments Details
2.2.2 Texas Instruments Major Business
2.2.3 Texas Instruments Ferroelectric Random Access Memory Product and Services
2.2.4 Texas Instruments Ferroelectric Random Access Memory Sales Quantity, Average Price, Revenue, Gross Margin and Market Share (2020-2025)
2.2.5 Texas Instruments Recent Developments/Updates
2.3 International Business Machines
2.3.1 International Business Machines Details
2.3.2 International Business Machines Major Business
2.3.3 International Business Machines Ferroelectric Random Access Memory Product and Services
2.3.4 International Business Machines Ferroelectric Random Access Memory Sales Quantity, Average Price, Revenue, Gross Margin and Market Share (2020-2025)
2.3.5 International Business Machines Recent Developments/Updates
2.4 Toshiba Corporation
2.4.1 Toshiba Corporation Details
2.4.2 Toshiba Corporation Major Business
2.4.3 Toshiba Corporation Ferroelectric Random Access Memory Product and Services
2.4.4 Toshiba Corporation Ferroelectric Random Access Memory Sales Quantity, Average Price, Revenue, Gross Margin and Market Share (2020-2025)
2.4.5 Toshiba Corporation Recent Developments/Updates
2.5 Infineon Technologies Inc
2.5.1 Infineon Technologies Inc Details
2.5.2 Infineon Technologies Inc Major Business
2.5.3 Infineon Technologies Inc Ferroelectric Random Access Memory Product and Services
2.5.4 Infineon Technologies Inc Ferroelectric Random Access Memory Sales Quantity, Average Price, Revenue, Gross Margin and Market Share (2020-2025)
2.5.5 Infineon Technologies Inc Recent Developments/Updates
2.6 LAPIS Semiconductor Co
2.6.1 LAPIS Semiconductor Co Details
2.6.2 LAPIS Semiconductor Co Major Business
2.6.3 LAPIS Semiconductor Co Ferroelectric Random Access Memory Product and Services
2.6.4 LAPIS Semiconductor Co Ferroelectric Random Access Memory Sales Quantity, Average Price, Revenue, Gross Margin and Market Share (2020-2025)
2.6.5 LAPIS Semiconductor Co Recent Developments/Updates
2.7 Fujitsu Ltd
2.7.1 Fujitsu Ltd Details
2.7.2 Fujitsu Ltd Major Business
2.7.3 Fujitsu Ltd Ferroelectric Random Access Memory Product and Services
2.7.4 Fujitsu Ltd Ferroelectric Random Access Memory Sales Quantity, Average Price, Revenue, Gross Margin and Market Share (2020-2025)
2.7.5 Fujitsu Ltd Recent Developments/Updates
2.8 ROHM
2.8.1 ROHM Details
2.8.2 ROHM Major Business
2.8.3 ROHM Ferroelectric Random Access Memory Product and Services
2.8.4 ROHM Ferroelectric Random Access Memory Sales Quantity, Average Price, Revenue, Gross Margin and Market Share (2020-2025)
2.8.5 ROHM Recent Developments/Updates
3 Competitive Environment: Ferroelectric Random Access Memory by Manufacturer
3.1 Global Ferroelectric Random Access Memory Sales Quantity by Manufacturer (2020-2025)
3.2 Global Ferroelectric Random Access Memory Revenue by Manufacturer (2020-2025)
3.3 Global Ferroelectric Random Access Memory Average Price by Manufacturer (2020-2025)
3.4 Market Share Analysis (2024)
3.4.1 Producer Shipments of Ferroelectric Random Access Memory by Manufacturer Revenue ($MM) and Market Share (%): 2024
3.4.2 Top 3 Ferroelectric Random Access Memory Manufacturer Market Share in 2024
3.4.3 Top 6 Ferroelectric Random Access Memory Manufacturer Market Share in 2024
3.5 Ferroelectric Random Access Memory Market: Overall Company Footprint Analysis
3.5.1 Ferroelectric Random Access Memory Market: Region Footprint
3.5.2 Ferroelectric Random Access Memory Market: Company Product Type Footprint
3.5.3 Ferroelectric Random Access Memory Market: Company Product Application Footprint
3.6 New Market Entrants and Barriers to Market Entry
3.7 Mergers, Acquisition, Agreements, and Collaborations
4 Consumption Analysis by Region
4.1 Global Ferroelectric Random Access Memory Market Size by Region
4.1.1 Global Ferroelectric Random Access Memory Sales Quantity by Region (2020-2031)
4.1.2 Global Ferroelectric Random Access Memory Consumption Value by Region (2020-2031)
4.1.3 Global Ferroelectric Random Access Memory Average Price by Region (2020-2031)
4.2 North America Ferroelectric Random Access Memory Consumption Value (2020-2031)
4.3 Europe Ferroelectric Random Access Memory Consumption Value (2020-2031)
4.4 Asia-Pacific Ferroelectric Random Access Memory Consumption Value (2020-2031)
4.5 South America Ferroelectric Random Access Memory Consumption Value (2020-2031)
4.6 Middle East & Africa Ferroelectric Random Access Memory Consumption Value (2020-2031)
5 Market Segment by Type
5.1 Global Ferroelectric Random Access Memory Sales Quantity by Type (2020-2031)
5.2 Global Ferroelectric Random Access Memory Consumption Value by Type (2020-2031)
5.3 Global Ferroelectric Random Access Memory Average Price by Type (2020-2031)
6 Market Segment by Application
6.1 Global Ferroelectric Random Access Memory Sales Quantity by Application (2020-2031)
6.2 Global Ferroelectric Random Access Memory Consumption Value by Application (2020-2031)
6.3 Global Ferroelectric Random Access Memory Average Price by Application (2020-2031)
7 North America
7.1 North America Ferroelectric Random Access Memory Sales Quantity by Type (2020-2031)
7.2 North America Ferroelectric Random Access Memory Sales Quantity by Application (2020-2031)
7.3 North America Ferroelectric Random Access Memory Market Size by Country
7.3.1 North America Ferroelectric Random Access Memory Sales Quantity by Country (2020-2031)
7.3.2 North America Ferroelectric Random Access Memory Consumption Value by Country (2020-2031)
7.3.3 United States Market Size and Forecast (2020-2031)
7.3.4 Canada Market Size and Forecast (2020-2031)
7.3.5 Mexico Market Size and Forecast (2020-2031)
8 Europe
8.1 Europe Ferroelectric Random Access Memory Sales Quantity by Type (2020-2031)
8.2 Europe Ferroelectric Random Access Memory Sales Quantity by Application (2020-2031)
8.3 Europe Ferroelectric Random Access Memory Market Size by Country
8.3.1 Europe Ferroelectric Random Access Memory Sales Quantity by Country (2020-2031)
8.3.2 Europe Ferroelectric Random Access Memory Consumption Value by Country (2020-2031)
8.3.3 Germany Market Size and Forecast (2020-2031)
8.3.4 France Market Size and Forecast (2020-2031)
8.3.5 United Kingdom Market Size and Forecast (2020-2031)
8.3.6 Russia Market Size and Forecast (2020-2031)
8.3.7 Italy Market Size and Forecast (2020-2031)
9 Asia-Pacific
9.1 Asia-Pacific Ferroelectric Random Access Memory Sales Quantity by Type (2020-2031)
9.2 Asia-Pacific Ferroelectric Random Access Memory Sales Quantity by Application (2020-2031)
9.3 Asia-Pacific Ferroelectric Random Access Memory Market Size by Region
9.3.1 Asia-Pacific Ferroelectric Random Access Memory Sales Quantity by Region (2020-2031)
9.3.2 Asia-Pacific Ferroelectric Random Access Memory Consumption Value by Region (2020-2031)
9.3.3 China Market Size and Forecast (2020-2031)
9.3.4 Japan Market Size and Forecast (2020-2031)
9.3.5 South Korea Market Size and Forecast (2020-2031)
9.3.6 India Market Size and Forecast (2020-2031)
9.3.7 Southeast Asia Market Size and Forecast (2020-2031)
9.3.8 Australia Market Size and Forecast (2020-2031)
10 South America
10.1 South America Ferroelectric Random Access Memory Sales Quantity by Type (2020-2031)
10.2 South America Ferroelectric Random Access Memory Sales Quantity by Application (2020-2031)
10.3 South America Ferroelectric Random Access Memory Market Size by Country
10.3.1 South America Ferroelectric Random Access Memory Sales Quantity by Country (2020-2031)
10.3.2 South America Ferroelectric Random Access Memory Consumption Value by Country (2020-2031)
10.3.3 Brazil Market Size and Forecast (2020-2031)
10.3.4 Argentina Market Size and Forecast (2020-2031)
11 Middle East & Africa
11.1 Middle East & Africa Ferroelectric Random Access Memory Sales Quantity by Type (2020-2031)
11.2 Middle East & Africa Ferroelectric Random Access Memory Sales Quantity by Application (2020-2031)
11.3 Middle East & Africa Ferroelectric Random Access Memory Market Size by Country
11.3.1 Middle East & Africa Ferroelectric Random Access Memory Sales Quantity by Country (2020-2031)
11.3.2 Middle East & Africa Ferroelectric Random Access Memory Consumption Value by Country (2020-2031)
11.3.3 Turkey Market Size and Forecast (2020-2031)
11.3.4 Egypt Market Size and Forecast (2020-2031)
11.3.5 Saudi Arabia Market Size and Forecast (2020-2031)
11.3.6 South Africa Market Size and Forecast (2020-2031)
12 Market Dynamics
12.1 Ferroelectric Random Access Memory Market Drivers
12.2 Ferroelectric Random Access Memory Market Restraints
12.3 Ferroelectric Random Access Memory Trends Analysis
12.4 Porters Five Forces Analysis
12.4.1 Threat of New Entrants
12.4.2 Bargaining Power of Suppliers
12.4.3 Bargaining Power of Buyers
12.4.4 Threat of Substitutes
12.4.5 Competitive Rivalry
13 Raw Material and Industry Chain
13.1 Raw Material of Ferroelectric Random Access Memory and Key Manufacturers
13.2 Manufacturing Costs Percentage of Ferroelectric Random Access Memory
13.3 Ferroelectric Random Access Memory Production Process
13.4 Industry Value Chain Analysis
14 Shipments by Distribution Channel
14.1 Sales Channel
14.1.1 Direct to End-User
14.1.2 Distributors
14.2 Ferroelectric Random Access Memory Typical Distributors
14.3 Ferroelectric Random Access Memory Typical Customers
15 Research Findings and Conclusion
16 Appendix
16.1 Methodology
16.2 Research Process and Data Source
16.3 Disclaimer
Cypress Semiconductor Corporations
Texas Instruments
International Business Machines
Toshiba Corporation
Infineon Technologies Inc
LAPIS Semiconductor Co
Fujitsu Ltd
ROHM
听
听
*If Applicable.
