Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a random-access memory similar in construction to DRAM but utilizing a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile random-access memory technologies which can offer that same functionality as flash memory.
FeRAM consists of a grid of small capacitors and associated wiring and signling transistors. Each storage element, a cell, consists of one capacitor and one transistor. Unlike the DRAM use a linear dielectric in its cell capacitor, dielectric structure in the FeRAM cell capacitor usually contains ferroelectric material, typically lead zirconate titanate (PZT).
A ferroelectric material has a nonlinear relationship between the applied electric field and the apparent stored charge. The ferroelectric characteristic has the form of a hysteresis loop, which is very similar in shape to the hysteresis loop of ferromagnetic materials. The dielectric constant of a ferroelectric is typically much higher than that of a linear dielectric because of the effects of semi-permanent electric dipoles formed in the crystal structure of the ferroelectric material. When an external electric field is applied across a dielectric, the dipoles tend to align themselves with the field direction, produced by small shifts in the positions of atoms and shifts in the distributions of electronic charge in the crystal structure. After the charge is removed, the dipoles retain their polarization state. Binary "0"s and "1"s are stored as one of two possible electric polarizations in each data storage cell. For example, in the figure a "1" is encoded using the negative remnant polarization "-Pr", and a "0" is encoded using the positive remnant polarization "+Pr".In terms of operation, FeRAM is similar to DRAM. Writing is accomplished by applying a field across the ferroelectric layer by charging the plates on either side of it, forcing the atoms inside into the "up" or "down" orientation (depending on the polarity of the charge), thereby storing a "1" or "0". Reading, however, is somewhat different than in DRAM. The transistor forces the cell into a particular state, say "0". If the cell already held a "0", nothing will happen in the output lines. If the cell held a "1", the re-orientation of the atoms in the film will cause a brief pulse of current in the output as they push electrons out of the metal on the "down" side. The presence of this pulse means the cell held a "1". Since this process overwrites the cell, reading FeRAM is a destructive process, and requires the cell to be re-written if it was changed.
The global market for Ferroelectric Random Access Memory was estimated to be worth US$ 273 million in 2023 and is forecast to a readjusted size of US$ 356.4 million by 2030 with a CAGR of 3.8% during the forecast period 2024-2030
The major players in global Ferroelectric RAM market include Ramtron, Fujistu, etc. The top 2 players occupy about 85% shares of the global market. North America and China are main markets, they occupy about 60% of the global market. Serial Memory is the main type, with a share about 60%. Smart Meters and Medical Devices are main applications, which hold a share about 50%.
Report Scope
This report aims to provide a comprehensive presentation of the global market for Ferroelectric Random Access Memory, focusing on the total sales volume, sales revenue, price, key companies market share and ranking, together with an analysis of Ferroelectric Random Access Memory by region & country, by Type, and by Application.
The Ferroelectric Random Access Memory market size, estimations, and forecasts are provided in terms of sales volume (K Units) and sales revenue ($ millions), considering 2023 as the base year, with history and forecast data for the period from 2019 to 2030. With both quantitative and qualitative analysis, to help readers develop business/growth strategies, assess the market competitive situation, analyze their position in the current marketplace, and make informed business decisions regarding Ferroelectric Random Access Memory.
Market Segmentation
By Company
Cypress Semiconductor Corporations
Texas Instruments
International Business Machines
Toshiba Corporation
Infineon Technologies Inc
LAPIS Semiconductor Co
Fujitsu Ltd
Segment by Type:
16K
32K
64K
Others
Segment by Application
Electronics
Aerospace
Others
By Region
North America
U.S.
Canada
Europe
Germany
France
U.K.
Italy
Russia
Asia-Pacific
China
Japan
South Korea
China Taiwan
Southeast Asia
India
Latin America
Mexico
Brazil
Argentina
Middle East & Africa
Turkey
Saudi Arabia
U.A.E
Chapter Outline
Chapter 1: Introduces the report scope of the report, global total market size (valve, volume and price). This chapter also provides the market dynamics, latest developments of the market, the driving factors and restrictive factors of the market, the challenges and risks faced by manufacturers in the industry, and the analysis of relevant policies in the industry.
Chapter 2: Detailed analysis of Ferroelectric Random Access Memory manufacturers competitive landscape, price, sales and revenue market share, latest development plan, merger, and acquisition information, etc.
Chapter 3: Provides the analysis of various market segments by Type, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different market segments.
Chapter 4: Provides the analysis of various market segments by Application, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different downstream markets.
Chapter 5: Sales, revenue of Ferroelectric Random Access Memory in regional level. It provides a quantitative analysis of the market size and development potential of each region and introduces the market development, future development prospects, market space, and market size of each country in the world.
Chapter 6: Sales, revenue of Ferroelectric Random Access Memory in country level. It provides sigmate data by Type, and by Application for each country/region.
Chapter 7: Provides profiles of key players, introducing the basic situation of the main companies in the market in detail, including product sales, revenue, price, gross margin, product introduction, recent development, etc.
Chapter 8: Analysis of industrial chain, including the upstream and downstream of the industry.
Chapter 9: Conclusion.
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1 Market Overview
1.1 Ferroelectric Random Access Memory Product Introduction
1.2 Global Ferroelectric Random Access Memory Market Size Forecast
1.2.1 Global Ferroelectric Random Access Memory Sales Value (2019-2030)
1.2.2 Global Ferroelectric Random Access Memory Sales Volume (2019-2030)
1.2.3 Global Ferroelectric Random Access Memory Sales Price (2019-2030)
1.3 Ferroelectric Random Access Memory Market Trends & Drivers
1.3.1 Ferroelectric Random Access Memory Industry Trends
1.3.2 Ferroelectric Random Access Memory Market Drivers & Opportunity
1.3.3 Ferroelectric Random Access Memory Market Challenges
1.3.4 Ferroelectric Random Access Memory Market Restraints
1.4 Assumptions and Limitations
1.5 Study Objectives
1.6 Years Considered
2 Competitive Analysis by Company
2.1 Global Ferroelectric Random Access Memory Players Revenue Ranking (2023)
2.2 Global Ferroelectric Random Access Memory Revenue by Company (2019-2024)
2.3 Global Ferroelectric Random Access Memory Players Sales Volume Ranking (2023)
2.4 Global Ferroelectric Random Access Memory Sales Volume by Company Players (2019-2024)
2.5 Global Ferroelectric Random Access Memory Average Price by Company (2019-2024)
2.6 Key Manufacturers Ferroelectric Random Access Memory Manufacturing Base Distribution and Headquarters
2.7 Key Manufacturers Ferroelectric Random Access Memory Product Offered
2.8 Key Manufacturers Time to Begin Mass Production of Ferroelectric Random Access Memory
2.9 Ferroelectric Random Access Memory Market Competitive Analysis
2.9.1 Ferroelectric Random Access Memory Market Concentration Rate (2019-2024)
2.9.2 Global 5 and 10 Largest Manufacturers by Ferroelectric Random Access Memory Revenue in 2023
2.9.3 Global Top Manufacturers by Company Type (Tier 1, Tier 2, and Tier 3) & (based on the Revenue in Ferroelectric Random Access Memory as of 2023)
2.10 Mergers & Acquisitions, Expansion
3 Segmentation by Type
3.1 Introduction by Type
3.1.1 16K
3.1.2 32K
3.1.3 64K
3.1.4 Others
3.2 Global Ferroelectric Random Access Memory Sales Value by Type
3.2.1 Global Ferroelectric Random Access Memory Sales Value by Type (2019 VS 2023 VS 2030)
3.2.2 Global Ferroelectric Random Access Memory Sales Value, by Type (2019-2030)
3.2.3 Global Ferroelectric Random Access Memory Sales Value, by Type (%) (2019-2030)
3.3 Global Ferroelectric Random Access Memory Sales Volume by Type
3.3.1 Global Ferroelectric Random Access Memory Sales Volume by Type (2019 VS 2023 VS 2030)
3.3.2 Global Ferroelectric Random Access Memory Sales Volume, by Type (2019-2030)
3.3.3 Global Ferroelectric Random Access Memory Sales Volume, by Type (%) (2019-2030)
3.4 Global Ferroelectric Random Access Memory Average Price by Type (2019-2030)
4 Segmentation by Application
4.1 Introduction by Application
4.1.1 Electronics
4.1.2 Aerospace
4.1.3 Others
4.2 Global Ferroelectric Random Access Memory Sales Value by Application
4.2.1 Global Ferroelectric Random Access Memory Sales Value by Application (2019 VS 2023 VS 2030)
4.2.2 Global Ferroelectric Random Access Memory Sales Value, by Application (2019-2030)
4.2.3 Global Ferroelectric Random Access Memory Sales Value, by Application (%) (2019-2030)
4.3 Global Ferroelectric Random Access Memory Sales Volume by Application
4.3.1 Global Ferroelectric Random Access Memory Sales Volume by Application (2019 VS 2023 VS 2030)
4.3.2 Global Ferroelectric Random Access Memory Sales Volume, by Application (2019-2030)
4.3.3 Global Ferroelectric Random Access Memory Sales Volume, by Application (%) (2019-2030)
4.4 Global Ferroelectric Random Access Memory Average Price by Application (2019-2030)
5 Segmentation by Region
5.1 Global Ferroelectric Random Access Memory Sales Value by Region
5.1.1 Global Ferroelectric Random Access Memory Sales Value by Region: 2019 VS 2023 VS 2030
5.1.2 Global Ferroelectric Random Access Memory Sales Value by Region (2019-2024)
5.1.3 Global Ferroelectric Random Access Memory Sales Value by Region (2025-2030)
5.1.4 Global Ferroelectric Random Access Memory Sales Value by Region (%), (2019-2030)
5.2 Global Ferroelectric Random Access Memory Sales Volume by Region
5.2.1 Global Ferroelectric Random Access Memory Sales Volume by Region: 2019 VS 2023 VS 2030
5.2.2 Global Ferroelectric Random Access Memory Sales Volume by Region (2019-2024)
5.2.3 Global Ferroelectric Random Access Memory Sales Volume by Region (2025-2030)
5.2.4 Global Ferroelectric Random Access Memory Sales Volume by Region (%), (2019-2030)
5.3 Global Ferroelectric Random Access Memory Average Price by Region (2019-2030)
5.4 North America
5.4.1 North America Ferroelectric Random Access Memory Sales Value, 2019-2030
5.4.2 North America Ferroelectric Random Access Memory Sales Value by Country (%), 2023 VS 2030
5.5 Europe
5.5.1 Europe Ferroelectric Random Access Memory Sales Value, 2019-2030
5.5.2 Europe Ferroelectric Random Access Memory Sales Value by Country (%), 2023 VS 2030
5.6 Asia Pacific
5.6.1 Asia Pacific Ferroelectric Random Access Memory Sales Value, 2019-2030
5.6.2 Asia Pacific Ferroelectric Random Access Memory Sales Value by Country (%), 2023 VS 2030
5.7 South America
5.7.1 South America Ferroelectric Random Access Memory Sales Value, 2019-2030
5.7.2 South America Ferroelectric Random Access Memory Sales Value by Country (%), 2023 VS 2030
5.8 Middle East & Africa
5.8.1 Middle East & Africa Ferroelectric Random Access Memory Sales Value, 2019-2030
5.8.2 Middle East & Africa Ferroelectric Random Access Memory Sales Value by Country (%), 2023 VS 2030
6 Segmentation by Key Countries/Regions
6.1 Key Countries/Regions Ferroelectric Random Access Memory Sales Value Growth Trends, 2019 VS 2023 VS 2030
6.2 Key Countries/Regions Ferroelectric Random Access Memory Sales Value
6.2.1 Key Countries/Regions Ferroelectric Random Access Memory Sales Value, 2019-2030
6.2.2 Key Countries/Regions Ferroelectric Random Access Memory Sales Volume, 2019-2030
6.3 United States
6.3.1 United States Ferroelectric Random Access Memory Sales Value, 2019-2030
6.3.2 United States Ferroelectric Random Access Memory Sales Value by Type (%), 2023 VS 2030
6.3.3 United States Ferroelectric Random Access Memory Sales Value by Application, 2023 VS 2030
6.4 Europe
6.4.1 Europe Ferroelectric Random Access Memory Sales Value, 2019-2030
6.4.2 Europe Ferroelectric Random Access Memory Sales Value by Type (%), 2023 VS 2030
6.4.3 Europe Ferroelectric Random Access Memory Sales Value by Application, 2023 VS 2030
6.5 China
6.5.1 China Ferroelectric Random Access Memory Sales Value, 2019-2030
6.5.2 China Ferroelectric Random Access Memory Sales Value by Type (%), 2023 VS 2030
6.5.3 China Ferroelectric Random Access Memory Sales Value by Application, 2023 VS 2030
6.6 Japan
6.6.1 Japan Ferroelectric Random Access Memory Sales Value, 2019-2030
6.6.2 Japan Ferroelectric Random Access Memory Sales Value by Type (%), 2023 VS 2030
6.6.3 Japan Ferroelectric Random Access Memory Sales Value by Application, 2023 VS 2030
6.7 South Korea
6.7.1 South Korea Ferroelectric Random Access Memory Sales Value, 2019-2030
6.7.2 South Korea Ferroelectric Random Access Memory Sales Value by Type (%), 2023 VS 2030
6.7.3 South Korea Ferroelectric Random Access Memory Sales Value by Application, 2023 VS 2030
6.8 Southeast Asia
6.8.1 Southeast Asia Ferroelectric Random Access Memory Sales Value, 2019-2030
6.8.2 Southeast Asia Ferroelectric Random Access Memory Sales Value by Type (%), 2023 VS 2030
6.8.3 Southeast Asia Ferroelectric Random Access Memory Sales Value by Application, 2023 VS 2030
6.9 India
6.9.1 India Ferroelectric Random Access Memory Sales Value, 2019-2030
6.9.2 India Ferroelectric Random Access Memory Sales Value by Type (%), 2023 VS 2030
6.9.3 India Ferroelectric Random Access Memory Sales Value by Application, 2023 VS 2030
7 Company Profiles
7.1 Cypress Semiconductor Corporations
7.1.1 Cypress Semiconductor Corporations Company Information
7.1.2 Cypress Semiconductor Corporations Introduction and Business Overview
7.1.3 Cypress Semiconductor Corporations Ferroelectric Random Access Memory Sales, Revenue and Gross Margin (2019-2024)
7.1.4 Cypress Semiconductor Corporations Ferroelectric Random Access Memory Product Offerings
7.1.5 Cypress Semiconductor Corporations Recent Development
7.2 Texas Instruments
7.2.1 Texas Instruments Company Information
7.2.2 Texas Instruments Introduction and Business Overview
7.2.3 Texas Instruments Ferroelectric Random Access Memory Sales, Revenue and Gross Margin (2019-2024)
7.2.4 Texas Instruments Ferroelectric Random Access Memory Product Offerings
7.2.5 Texas Instruments Recent Development
7.3 International Business Machines
7.3.1 International Business Machines Company Information
7.3.2 International Business Machines Introduction and Business Overview
7.3.3 International Business Machines Ferroelectric Random Access Memory Sales, Revenue and Gross Margin (2019-2024)
7.3.4 International Business Machines Ferroelectric Random Access Memory Product Offerings
7.3.5 International Business Machines Recent Development
7.4 Toshiba Corporation
7.4.1 Toshiba Corporation Company Information
7.4.2 Toshiba Corporation Introduction and Business Overview
7.4.3 Toshiba Corporation Ferroelectric Random Access Memory Sales, Revenue and Gross Margin (2019-2024)
7.4.4 Toshiba Corporation Ferroelectric Random Access Memory Product Offerings
7.4.5 Toshiba Corporation Recent Development
7.5 Infineon Technologies Inc
7.5.1 Infineon Technologies Inc Company Information
7.5.2 Infineon Technologies Inc Introduction and Business Overview
7.5.3 Infineon Technologies Inc Ferroelectric Random Access Memory Sales, Revenue and Gross Margin (2019-2024)
7.5.4 Infineon Technologies Inc Ferroelectric Random Access Memory Product Offerings
7.5.5 Infineon Technologies Inc Recent Development
7.6 LAPIS Semiconductor Co
7.6.1 LAPIS Semiconductor Co Company Information
7.6.2 LAPIS Semiconductor Co Introduction and Business Overview
7.6.3 LAPIS Semiconductor Co Ferroelectric Random Access Memory Sales, Revenue and Gross Margin (2019-2024)
7.6.4 LAPIS Semiconductor Co Ferroelectric Random Access Memory Product Offerings
7.6.5 LAPIS Semiconductor Co Recent Development
7.7 Fujitsu Ltd
7.7.1 Fujitsu Ltd Company Information
7.7.2 Fujitsu Ltd Introduction and Business Overview
7.7.3 Fujitsu Ltd Ferroelectric Random Access Memory Sales, Revenue and Gross Margin (2019-2024)
7.7.4 Fujitsu Ltd Ferroelectric Random Access Memory Product Offerings
7.7.5 Fujitsu Ltd Recent Development
8 Industry Chain Analysis
8.1 Ferroelectric Random Access Memory Industrial Chain
8.2 Ferroelectric Random Access Memory Upstream Analysis
8.2.1 Key Raw Materials
8.2.2 Raw Materials Key Suppliers
8.2.3 Manufacturing Cost Structure
8.3 Midstream Analysis
8.4 Downstream Analysis (Customers Analysis)
8.5 Sales Model and Sales Channels
8.5.1 Ferroelectric Random Access Memory Sales Model
8.5.2 Sales Channel
8.5.3 Ferroelectric Random Access Memory Distributors
9 Research Findings and Conclusion
10 Appendix
10.1 Research Methodology
10.1.1 Methodology/Research Approach
10.1.2 Data Source
10.2 Author Details
10.3 Disclaimer
Cypress Semiconductor Corporations
Texas Instruments
International Business Machines
Toshiba Corporation
Infineon Technologies Inc
LAPIS Semiconductor Co
Fujitsu Ltd
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*If Applicable.
