Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a random-access memory similar in construction to DRAM but utilizing a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile random-access memory technologies which can offer that same functionality as flash memory.
FeRAM consists of a grid of small capacitors and associated wiring and signling transistors. Each storage element, a cell, consists of one capacitor and one transistor. Unlike the DRAM use a linear dielectric in its cell capacitor, dielectric structure in the FeRAM cell capacitor usually contains ferroelectric material, typically lead zirconate titanate (PZT).
A ferroelectric material has a nonlinear relationship between the applied electric field and the apparent stored charge. The ferroelectric characteristic has the form of a hysteresis loop, which is very similar in shape to the hysteresis loop of ferromagnetic materials. The dielectric constant of a ferroelectric is typically much higher than that of a linear dielectric because of the effects of semi-permanent electric dipoles formed in the crystal structure of the ferroelectric material. When an external electric field is applied across a dielectric, the dipoles tend to align themselves with the field direction, produced by small shifts in the positions of atoms and shifts in the distributions of electronic charge in the crystal structure. After the charge is removed, the dipoles retain their polarization state. Binary "0"s and "1"s are stored as one of two possible electric polarizations in each data storage cell. For example, in the figure a "1" is encoded using the negative remnant polarization "-Pr", and a "0" is encoded using the positive remnant polarization "+Pr".In terms of operation, FeRAM is similar to DRAM. Writing is accomplished by applying a field across the ferroelectric layer by charging the plates on either side of it, forcing the atoms inside into the "up" or "down" orientation (depending on the polarity of the charge), thereby storing a "1" or "0". Reading, however, is somewhat different than in DRAM. The transistor forces the cell into a particular state, say "0". If the cell already held a "0", nothing will happen in the output lines. If the cell held a "1", the re-orientation of the atoms in the film will cause a brief pulse of current in the output as they push electrons out of the metal on the "down" side. The presence of this pulse means the cell held a "1". Since this process overwrites the cell, reading FeRAM is a destructive process, and requires the cell to be re-written if it was changed.
The global Ferroelectric Random Access Memory market is projected to grow from US$ 284.9 million in 2023 to US$ 356.4 million by 2029, at a Compound Annual Growth Rate (CAGR) of 3.8% during the forecast period.
The major players in global Ferroelectric RAM market include Ramtron, Fujistu, etc. The top 2 players occupy about 85% shares of the global market. North America and China are main markets, they occupy about 60% of the global market. Serial Memory is the main type, with a share about 60%. Smart Meters and Medical Devices are main applications, which hold a share about 50%.
In terms of production side, this report researches the Ferroelectric Random Access Memory production, growth rate, market share by manufacturers and by region (region level and country level), from 2018 to 2023, and forecast to 2029.
In terms of consumption side, this report focuses on the sales of Ferroelectric Random Access Memory by region (region level and country level), by company, by Type and by Application. from 2018 to 2023 and forecast to 2029.
Report Includes:
This report presents an overview of global market for Ferroelectric Random Access Memory, capacity, output, revenue and price. Analyses of the global market trends, with historic market revenue/sales data for 2018 - 2022, estimates for 2023, and projections of CAGR through 2029.
This report researches the key producers of Ferroelectric Random Access Memory, also provides the consumption of main regions and countries. Highlights of the upcoming market potential for Ferroelectric Random Access Memory, and key regions/countries of focus to forecast this market into various segments and sub-segments. Country specific data and market value analysis for the U.S., Canada, Mexico, Brazil, China, Japan, South Korea, Southeast Asia, India, Germany, the U.K., Italy, Middle East, Africa, and Other Countries.
This report focuses on the Ferroelectric Random Access Memory sales, revenue, market share and industry ranking of main manufacturers, data from 2018 to 2023. Identification of the major stakeholders in the global Ferroelectric Random Access Memory market, and analysis of their competitive landscape and market positioning based on recent developments and segmental revenues. This report will help stakeholders to understand the competitive landscape and gain more insights and position their businesses and market strategies in a better way.
This report analyzes the segments data by Type and by Application, sales, revenue, and price, from 2018 to 2029. Evaluation and forecast the market size for Ferroelectric Random Access Memory sales, projected growth trends, production technology, application and end-user industry.
Descriptive company profiles of the major global players, including Cypress Semiconductor Corporations, Texas Instruments, International Business Machines, Toshiba Corporation, Infineon Technologies Inc, LAPIS Semiconductor Co and Fujitsu Ltd, etc.
By Company
Cypress Semiconductor Corporations
Texas Instruments
International Business Machines
Toshiba Corporation
Infineon Technologies Inc
LAPIS Semiconductor Co
Fujitsu Ltd
Segment by Type
16K
32K
64K
Others
Segment by Application
Electronics
Aerospace
Others
Production by Region
North America
Europe
China
Japan
South Korea
Sales by Region
US & Canada
U.S.
Canada
China
Asia (excluding China)
Japan
South Korea
China Taiwan
Southeast Asia
India
Europe
Germany
France
U.K.
Italy
Russia
Middle East, Africa, Latin America
Brazil
Mexico
Turkey
Israel
GCC Countries
Chapter Outline
Chapter 1: Introduces the report scope of the report, executive summary of different market segments (by Type and by Application, etc.), including the market size of each market segment, future development potential, and so on. It offers a high-level view of the current state of the market and its likely evolution in the short to mid-term, and long term.
Chapter 2: Ferroelectric Random Access Memory production/output of global and key producers (regions/countries). It provides a quantitative analysis of the production and development potential of each producer in the next six years.
Chapter 3: Sales (consumption), revenue of Ferroelectric Random Access Memory in global, regional level and country level. It provides a quantitative analysis of the market size and development potential of each region and its main countries and introduces the market development, future development prospects, market space, and capacity of each country in the world.
Chapter 4: Detailed analysis of Ferroelectric Random Access Memory manufacturers competitive landscape, price, sales, revenue, market share and industry ranking, latest development plan, merger, and acquisition information, etc.
Chapter 5: Provides the analysis of various market segments by type, covering the sales, revenue, average price, and development potential of each market segment, to help readers find the blue ocean market in different market segments.
Chapter 6: Provides the analysis of various market segments by application, covering the sales, revenue, average price, and development potential of each market segment, to help readers find the blue ocean market in different downstream markets.
Chapter 7: North America (US & Canada) by type, by application and by country, sales and revenue for each segment.
Chapter 8: Europe by type, by application and by country, sales and revenue for each segment.
Chapter 9: China by type and by application sales and revenue for each segment.
Chapter 10: Asia (excluding China) by type, by application and by region, sales and revenue for each segment.
Chapter 11: Middle East, Africa, Latin America by type, by application and by country, sales and revenue for each segment.
Chapter 12: Provides profiles of key manufacturers, introducing the basic situation of the main companies in the market in detail, including product descriptions and specifications, Ferroelectric Random Access Memory sales, revenue, price, gross margin, and recent development, etc.
Chapter 13: Analysis of industrial chain, sales channel, key raw materials, distributors and customers.
Chapter 14: Introduces the market dynamics, latest developments of the market, the driving factors and restrictive factors of the market, the challenges and risks faced by manufacturers in the industry, and the analysis of relevant policies in the industry.
Chapter 15: The main points and conclusions of the report.
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1 Study Coverage
1.1 Ferroelectric Random Access Memory Product Introduction
1.2 Market by Type
1.2.1 Global Ferroelectric Random Access Memory Market Size by Type, 2018 VS 2022 VS 2029
1.2.2 16K
1.2.3 32K
1.2.4 64K
1.2.5 Others
1.3 Market by Application
1.3.1 Global Ferroelectric Random Access Memory Market Size by Application, 2018 VS 2022 VS 2029
1.3.2 Electronics
1.3.3 Aerospace
1.3.4 Others
1.4 Assumptions and Limitations
1.5 Study Objectives
1.6 Years Considered
2 Global Ferroelectric Random Access Memory Production
2.1 Global Ferroelectric Random Access Memory Production Capacity (2018-2029)
2.2 Global Ferroelectric Random Access Memory Production by Region: 2018 VS 2022 VS 2029
2.3 Global Ferroelectric Random Access Memory Production by Region
2.3.1 Global Ferroelectric Random Access Memory Historic Production by Region (2018-2023)
2.3.2 Global Ferroelectric Random Access Memory Forecasted Production by Region (2024-2029)
2.3.3 Global Ferroelectric Random Access Memory Production Market Share by Region (2018-2029)
2.4 North America
2.5 Europe
2.6 China
2.7 Japan
2.8 South Korea
3 Executive Summary
3.1 Global Ferroelectric Random Access Memory Revenue Estimates and Forecasts 2018-2029
3.2 Global Ferroelectric Random Access Memory Revenue by Region
3.2.1 Global Ferroelectric Random Access Memory Revenue by Region: 2018 VS 2022 VS 2029
3.2.2 Global Ferroelectric Random Access Memory Revenue by Region (2018-2023)
3.2.3 Global Ferroelectric Random Access Memory Revenue by Region (2024-2029)
3.2.4 Global Ferroelectric Random Access Memory Revenue Market Share by Region (2018-2029)
3.3 Global Ferroelectric Random Access Memory Sales Estimates and Forecasts 2018-2029
3.4 Global Ferroelectric Random Access Memory Sales by Region
3.4.1 Global Ferroelectric Random Access Memory Sales by Region: 2018 VS 2022 VS 2029
3.4.2 Global Ferroelectric Random Access Memory Sales by Region (2018-2023)
3.4.3 Global Ferroelectric Random Access Memory Sales by Region (2024-2029)
3.4.4 Global Ferroelectric Random Access Memory Sales Market Share by Region (2018-2029)
3.5 US & Canada
3.6 Europe
3.7 China
3.8 Asia (excluding China)
3.9 Middle East, Africa and Latin America
4 Competition by Manufactures
4.1 Global Ferroelectric Random Access Memory Sales by Manufacturers
4.1.1 Global Ferroelectric Random Access Memory Sales by Manufacturers (2018-2023)
4.1.2 Global Ferroelectric Random Access Memory Sales Market Share by Manufacturers (2018-2023)
4.1.3 Global Top 10 and Top 5 Largest Manufacturers of Ferroelectric Random Access Memory in 2022
4.2 Global Ferroelectric Random Access Memory Revenue by Manufacturers
4.2.1 Global Ferroelectric Random Access Memory Revenue by Manufacturers (2018-2023)
4.2.2 Global Ferroelectric Random Access Memory Revenue Market Share by Manufacturers (2018-2023)
4.2.3 Global Top 10 and Top 5 Companies by Ferroelectric Random Access Memory Revenue in 2022
4.3 Global Ferroelectric Random Access Memory Sales Price by Manufacturers
4.4 Global Key Players of Ferroelectric Random Access Memory, Industry Ranking, 2021 VS 2022 VS 2023
4.5 Analysis of Competitive Landscape
4.5.1 Manufacturers Market Concentration Ratio (CR5 and HHI)
4.5.2 Global Ferroelectric Random Access Memory Market Share by Company Type (Tier 1, Tier 2, and Tier 3)
4.6 Global Key Manufacturers of Ferroelectric Random Access Memory, Manufacturing Base Distribution and Headquarters
4.7 Global Key Manufacturers of Ferroelectric Random Access Memory, Product Offered and Application
4.8 Global Key Manufacturers of Ferroelectric Random Access Memory, Date of Enter into This Industry
4.9 Mergers & Acquisitions, Expansion Plans
5 Market Size by Type
5.1 Global Ferroelectric Random Access Memory Sales by Type
5.1.1 Global Ferroelectric Random Access Memory Historical Sales by Type (2018-2023)
5.1.2 Global Ferroelectric Random Access Memory Forecasted Sales by Type (2024-2029)
5.1.3 Global Ferroelectric Random Access Memory Sales Market Share by Type (2018-2029)
5.2 Global Ferroelectric Random Access Memory Revenue by Type
5.2.1 Global Ferroelectric Random Access Memory Historical Revenue by Type (2018-2023)
5.2.2 Global Ferroelectric Random Access Memory Forecasted Revenue by Type (2024-2029)
5.2.3 Global Ferroelectric Random Access Memory Revenue Market Share by Type (2018-2029)
5.3 Global Ferroelectric Random Access Memory Price by Type
5.3.1 Global Ferroelectric Random Access Memory Price by Type (2018-2023)
5.3.2 Global Ferroelectric Random Access Memory Price Forecast by Type (2024-2029)
6 Market Size by Application
6.1 Global Ferroelectric Random Access Memory Sales by Application
6.1.1 Global Ferroelectric Random Access Memory Historical Sales by Application (2018-2023)
6.1.2 Global Ferroelectric Random Access Memory Forecasted Sales by Application (2024-2029)
6.1.3 Global Ferroelectric Random Access Memory Sales Market Share by Application (2018-2029)
6.2 Global Ferroelectric Random Access Memory Revenue by Application
6.2.1 Global Ferroelectric Random Access Memory Historical Revenue by Application (2018-2023)
6.2.2 Global Ferroelectric Random Access Memory Forecasted Revenue by Application (2024-2029)
6.2.3 Global Ferroelectric Random Access Memory Revenue Market Share by Application (2018-2029)
6.3 Global Ferroelectric Random Access Memory Price by Application
6.3.1 Global Ferroelectric Random Access Memory Price by Application (2018-2023)
6.3.2 Global Ferroelectric Random Access Memory Price Forecast by Application (2024-2029)
7 US & Canada
7.1 US & Canada Ferroelectric Random Access Memory Market Size by Type
7.1.1 US & Canada Ferroelectric Random Access Memory Sales by Type (2018-2029)
7.1.2 US & Canada Ferroelectric Random Access Memory Revenue by Type (2018-2029)
7.2 US & Canada Ferroelectric Random Access Memory Market Size by Application
7.2.1 US & Canada Ferroelectric Random Access Memory Sales by Application (2018-2029)
7.2.2 US & Canada Ferroelectric Random Access Memory Revenue by Application (2018-2029)
7.3 US & Canada Ferroelectric Random Access Memory Sales by Country
7.3.1 US & Canada Ferroelectric Random Access Memory Revenue by Country: 2018 VS 2022 VS 2029
7.3.2 US & Canada Ferroelectric Random Access Memory Sales by Country (2018-2029)
7.3.3 US & Canada Ferroelectric Random Access Memory Revenue by Country (2018-2029)
7.3.4 U.S.
7.3.5 Canada
8 Europe
8.1 Europe Ferroelectric Random Access Memory Market Size by Type
8.1.1 Europe Ferroelectric Random Access Memory Sales by Type (2018-2029)
8.1.2 Europe Ferroelectric Random Access Memory Revenue by Type (2018-2029)
8.2 Europe Ferroelectric Random Access Memory Market Size by Application
8.2.1 Europe Ferroelectric Random Access Memory Sales by Application (2018-2029)
8.2.2 Europe Ferroelectric Random Access Memory Revenue by Application (2018-2029)
8.3 Europe Ferroelectric Random Access Memory Sales by Country
8.3.1 Europe Ferroelectric Random Access Memory Revenue by Country: 2018 VS 2022 VS 2029
8.3.2 Europe Ferroelectric Random Access Memory Sales by Country (2018-2029)
8.3.3 Europe Ferroelectric Random Access Memory Revenue by Country (2018-2029)
8.3.4 Germany
8.3.5 France
8.3.6 U.K.
8.3.7 Italy
8.3.8 Russia
9 China
9.1 China Ferroelectric Random Access Memory Market Size by Type
9.1.1 China Ferroelectric Random Access Memory Sales by Type (2018-2029)
9.1.2 China Ferroelectric Random Access Memory Revenue by Type (2018-2029)
9.2 China Ferroelectric Random Access Memory Market Size by Application
9.2.1 China Ferroelectric Random Access Memory Sales by Application (2018-2029)
9.2.2 China Ferroelectric Random Access Memory Revenue by Application (2018-2029)
10 Asia (excluding China)
10.1 Asia Ferroelectric Random Access Memory Market Size by Type
10.1.1 Asia Ferroelectric Random Access Memory Sales by Type (2018-2029)
10.1.2 Asia Ferroelectric Random Access Memory Revenue by Type (2018-2029)
10.2 Asia Ferroelectric Random Access Memory Market Size by Application
10.2.1 Asia Ferroelectric Random Access Memory Sales by Application (2018-2029)
10.2.2 Asia Ferroelectric Random Access Memory Revenue by Application (2018-2029)
10.3 Asia Ferroelectric Random Access Memory Sales by Region
10.3.1 Asia Ferroelectric Random Access Memory Revenue by Region: 2018 VS 2022 VS 2029
10.3.2 Asia Ferroelectric Random Access Memory Revenue by Region (2018-2029)
10.3.3 Asia Ferroelectric Random Access Memory Sales by Region (2018-2029)
10.3.4 Japan
10.3.5 South Korea
10.3.6 China Taiwan
10.3.7 Southeast Asia
10.3.8 India
11 Middle East, Africa and Latin America
11.1 Middle East, Africa and Latin America Ferroelectric Random Access Memory Market Size by Type
11.1.1 Middle East, Africa and Latin America Ferroelectric Random Access Memory Sales by Type (2018-2029)
11.1.2 Middle East, Africa and Latin America Ferroelectric Random Access Memory Revenue by Type (2018-2029)
11.2 Middle East, Africa and Latin America Ferroelectric Random Access Memory Market Size by Application
11.2.1 Middle East, Africa and Latin America Ferroelectric Random Access Memory Sales by Application (2018-2029)
11.2.2 Middle East, Africa and Latin America Ferroelectric Random Access Memory Revenue by Application (2018-2029)
11.3 Middle East, Africa and Latin America Ferroelectric Random Access Memory Sales by Country
11.3.1 Middle East, Africa and Latin America Ferroelectric Random Access Memory Revenue by Country: 2018 VS 2022 VS 2029
11.3.2 Middle East, Africa and Latin America Ferroelectric Random Access Memory Revenue by Country (2018-2029)
11.3.3 Middle East, Africa and Latin America Ferroelectric Random Access Memory Sales by Country (2018-2029)
11.3.4 Brazil
11.3.5 Mexico
11.3.6 Turkey
11.3.7 Israel
11.3.8 GCC Countries
12 Corporate Profiles
12.1 Cypress Semiconductor Corporations
12.1.1 Cypress Semiconductor Corporations Company Information
12.1.2 Cypress Semiconductor Corporations Overview
12.1.3 Cypress Semiconductor Corporations Ferroelectric Random Access Memory Sales, Price, Revenue and Gross Margin (2018-2023)
12.1.4 Cypress Semiconductor Corporations Ferroelectric Random Access Memory Product Model Numbers, Pictures, Descriptions and Specifications
12.1.5 Cypress Semiconductor Corporations Recent Developments
12.2 Texas Instruments
12.2.1 Texas Instruments Company Information
12.2.2 Texas Instruments Overview
12.2.3 Texas Instruments Ferroelectric Random Access Memory Sales, Price, Revenue and Gross Margin (2018-2023)
12.2.4 Texas Instruments Ferroelectric Random Access Memory Product Model Numbers, Pictures, Descriptions and Specifications
12.2.5 Texas Instruments Recent Developments
12.3 International Business Machines
12.3.1 International Business Machines Company Information
12.3.2 International Business Machines Overview
12.3.3 International Business Machines Ferroelectric Random Access Memory Sales, Price, Revenue and Gross Margin (2018-2023)
12.3.4 International Business Machines Ferroelectric Random Access Memory Product Model Numbers, Pictures, Descriptions and Specifications
12.3.5 International Business Machines Recent Developments
12.4 Toshiba Corporation
12.4.1 Toshiba Corporation Company Information
12.4.2 Toshiba Corporation Overview
12.4.3 Toshiba Corporation Ferroelectric Random Access Memory Sales, Price, Revenue and Gross Margin (2018-2023)
12.4.4 Toshiba Corporation Ferroelectric Random Access Memory Product Model Numbers, Pictures, Descriptions and Specifications
12.4.5 Toshiba Corporation Recent Developments
12.5 Infineon Technologies Inc
12.5.1 Infineon Technologies Inc Company Information
12.5.2 Infineon Technologies Inc Overview
12.5.3 Infineon Technologies Inc Ferroelectric Random Access Memory Sales, Price, Revenue and Gross Margin (2018-2023)
12.5.4 Infineon Technologies Inc Ferroelectric Random Access Memory Product Model Numbers, Pictures, Descriptions and Specifications
12.5.5 Infineon Technologies Inc Recent Developments
12.6 LAPIS Semiconductor Co
12.6.1 LAPIS Semiconductor Co Company Information
12.6.2 LAPIS Semiconductor Co Overview
12.6.3 LAPIS Semiconductor Co Ferroelectric Random Access Memory Sales, Price, Revenue and Gross Margin (2018-2023)
12.6.4 LAPIS Semiconductor Co Ferroelectric Random Access Memory Product Model Numbers, Pictures, Descriptions and Specifications
12.6.5 LAPIS Semiconductor Co Recent Developments
12.7 Fujitsu Ltd
12.7.1 Fujitsu Ltd Company Information
12.7.2 Fujitsu Ltd Overview
12.7.3 Fujitsu Ltd Ferroelectric Random Access Memory Sales, Price, Revenue and Gross Margin (2018-2023)
12.7.4 Fujitsu Ltd Ferroelectric Random Access Memory Product Model Numbers, Pictures, Descriptions and Specifications
12.7.5 Fujitsu Ltd Recent Developments
13 Industry Chain and Sales Channels Analysis
13.1 Ferroelectric Random Access Memory Industry Chain Analysis
13.2 Ferroelectric Random Access Memory Key Raw Materials
13.2.1 Key Raw Materials
13.2.2 Raw Materials Key Suppliers
13.3 Ferroelectric Random Access Memory Production Mode & Process
13.4 Ferroelectric Random Access Memory Sales and Marketing
13.4.1 Ferroelectric Random Access Memory Sales Channels
13.4.2 Ferroelectric Random Access Memory Distributors
13.5 Ferroelectric Random Access Memory Customers
14 Ferroelectric Random Access Memory Market Dynamics
14.1 Ferroelectric Random Access Memory Industry Trends
14.2 Ferroelectric Random Access Memory Market Drivers
14.3 Ferroelectric Random Access Memory Market Challenges
14.4 Ferroelectric Random Access Memory Market Restraints
15 Key Finding in The Global Ferroelectric Random Access Memory Study
16 Appendix
16.1 Research Methodology
16.1.1 Methodology/Research Approach
16.1.2 Data Source
16.2 Author Details
16.3 Disclaimer
Cypress Semiconductor Corporations
Texas Instruments
International Business Machines
Toshiba Corporation
Infineon Technologies Inc
LAPIS Semiconductor Co
Fujitsu Ltd
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*If Applicable.
