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- global semiconductors advanced substrate market
Your search for "global Semiconductor Advanced Substrate market" gave back 1682235 results.
Silicon carbide (SiC), also known as carborundum, is a compound of silicon and carbon with chemical formula SiC. Silicon carbide is a semiconductor,...
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MRRPB5
May 2024
Price: USD 5,900.00
The global Semiconductor Substrate Material market was valued at US$ million in 2023 and is anticipated to reach US$ million by 2030, witnessing a...
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MRRPB5
June 2024
Price: USD 2,900.00
N-type conductive silicon carbide (SiC) substrates refer to SiC wafers that have been intentionally doped with donor impurities to create an excess...
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MRRPB5
July 2024
Price: USD 2,900.00
The global Semiconductor Substrate Material market is projected to reach US$ million in 2029, increasing from US$ million in 2022, with the CAGR of...
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MRRPB5
October 2023
Price: USD 2,900.00
Gallium arsenide (GaAs) has two growth methods which are liquid encapsulated czochralsky (LEC) and vertical gradient freeze (VGF). Featuring in...
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MRRPB5
May 2024
Price: USD 2,900.00
Gallium arsenide (GaAs) has two growth methods which are liquid encapsulated czochralsky (LEC) and vertical gradient freeze (VGF). Featuring in...
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LPI
July 2024
Price: USD 3,660.00
The global SiC Substrates market size was valued at US$ 555.1 million in 2023. With growing demand in downstream market, the SiC Substrates is...
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LPI
January 2024
Price: USD 3,660.00
Diamond heat sink materials have the advantages of high thermal conductivity, low expansion, low density, good platability and machinability, and can...
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MRRPB5
October 2024
Price: USD 3,950.00
Silicon carbide (SiC), also known as carborundum, is a compound of silicon and carbon with chemical formula SiC. Silicon carbide is a semiconductor,...
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GIR
September 2024
Price: USD 3,480.00
The substrate gallium nitride epitaxial wafer is designed to withstand the extreme stress of the GaN epitaxial process and reduce wafer bending and...
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LPI
June 2024
Price: USD 3,660.00
Diamond heat sink materials have the advantages of high thermal conductivity, low expansion, low density, good platability and machinability, and can...
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MRRPB5
July 2024
Price: USD 2,900.00
The power GaN substrate wafer is designed to withstand the extreme stress of the GaN epitaxial process and reduce wafer bending and warping. GaN...
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LPI
May 2024
Price: USD 3,660.00
The substrate gallium nitride epitaxial wafer is designed to withstand the extreme stress of the GaN epitaxial process and reduce wafer bending and...
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MRRPB5
April 2024
Price: USD 2,900.00
Silicon carbide (SiC), also known as carborundum, is a compound of silicon and carbon with chemical formula SiC. Silicon carbide is a semiconductor,...
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MRRPB5
March 2024
Price: USD 3,950.00
Silicon carbide (SiC) monocrystalline substrates are high-quality wafers made of single crystal silicon carbide material. They serve as a foundation...
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MRRPB5
October 2024
Price: USD 3,950.00
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